Senin, 13 Juni 2011

Samsung Introduces DDR3 30nm Memory

Samsung is now preparing to launch its first consumer memory solution that utilizes sophisticated DRAM DDR3 30nm chips. After the end of last month’s notice concerned has started to be produced  32GB memory module based on the 30nm manufacturing node.
Samsung’s memory range is being prepared that would involve very low profile (VLP) UDIMMs for desktop and SO-DIMMs for notebooks. And this will be available either as self DDR3 modules with 2GB and 4GB capacity, or in kit form to provide a 4GB or 8GB memory upgrade for users of DIY.
Its clock speed will be set at 1600MHz, but unfortunately not known about the timing information available at this time.

According to Samsung, this new 30nm memory chips use up to 2 / 3 energy than memory chips manufactured with 60nm technology the industry standard.
“Changing your DRAM to be something the easiest and most cost effective way to improve your PC performance, and new products that offer the most energy-efficient options that are currently available to consumers,” said Reid Sullivan, senior vice president of marketing of mobile entertainment at Samsung Electronics America.
“Samsung is committed to bringing enhanced performance computing for consumers, and 30nm process technology, we offer a remarkable combination of low power DDR3 technology advanced, with super-speeds up to 1600 megabits per second (Mbps)”, explained the Samsung.
Latest 30nm DDR3 DRAM modules made by Samsung will be available in the United States through various online and retail suppliers, including Amazon, Fry’s, Micro Center, NewEgg and TigerDirect.
Price for single module pack is expected to range from 30 USD to 55 USD, while the dual-pack module will range from 55 USD to 110 USD.

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